Chinese Academy of Sciences Advances Sub-3-nm GAA Chip Path Using DUV Lithography

Key facts

• Chinese Academy of Sciences researchers established a preliminary gate-all-around (GAA) device development path using deep ultraviolet (DUV) lithography
• The work targets semiconductor processing nodes below 3-nm without extreme ultraviolet (EUV) tools
• Ye Tianchun of the academy's Institute of Microelectronics (IMECAS) described the result as a "new early-stage MOS transistor process path for China's sub-3-nm advanced manufacturing"
• The institute finished early integration for stacked nanosheet-channel GAA CMOS transistors using DUV tools
• Taiwanese media Digitimes reported the development on Thursday, citing Ye Tianchun's speech
• ASML is barred under US export control rules from selling EUV machines, essential for chips below the 7-nm node, to Chinese clients
• The breakthrough is far from mass production but shows China is tracking the road map of global leaders
• The development is the latest progress in China's drive to chart an alternative path to advanced chipmaking amid US export restrictions